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Electronic systems and digital computers are an indispensable element of modernmultimedia technologies and the Internet society. But their explosive advancewould not have been possible without the extraordinary progress in VLSItechnology using highquality SiO2. This volume addresses the thin gate oxidesinvolved in the individual processes in fabrication e.g. the growth cleaningand thermal oxidation of silicon metal interconnect formation andphotolithography. It describes new methods for observing defects in SiO2 aswell as novel approaches to eliminating such defects. The book will be avaluable resource for all materials scientists and engineers seeking to furtheradvance the quality of silicon microdevices. TOC1. Introduction. 2. Outlineof Silicon Processes. 3. Basic Characteristics of SiO2. 4. Oxide DefectLocating Method. 5. Correlation between pSi and nSi MinorityCarrierRecombination Lifetimes. 6. Wafer Transient Deformation Obseration. 7. SiO2Weak Spots Originating in Si Wafers. 8. Wafer Cleaning Process Affecting SiO2Dielectric Strength. 9. Selective Oxidation Process Inducing SiO2 WeakSpots.10. Thermal Oxidation Causing SiO2 Instability. 11. Polysilicon Gate FormationProcess Affecting SiO2 Quality. 12. Metal Interconnect Formation ProcessCausing SiO2 Deterioration. 13. SiSiO2 WeakSpots System Repaired from PlasmaDamage Through Water Pouring. 14. Local WeakSpots Found in PolyOxides andBuried Oxides. 15. Oxides Reliability. «
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