<strong>Single Crystal Growth of Semiconductors from Metallic Solutions</strong> covers the fourprincipal growth techniques currently in use for the growth of s... » 

Single Crystal Growth of Semiconductors from Metallic Solutions covers the fourprincipal growth techniques currently in use for the growth of semiconductorsingle crystals from metallic solutions. Providing an indepth review of thestateoftheart of each both experimentally and by numerical simulations. Theimportance of a close interaction between the numerical and experimentalaspects of the processes is also emphasized.Advances in the fields of electronics and optoelectronics are hampered by thelimited number of substrate materials which can be readily produced by meltgrowth techniques such as the Czochralski and Bridgman methods. This can bealleviated by the use of alternative growth techniques and in particulargrowth from metallic solutions. The principal techniques currently in use areLiquid Phase Epitaxy Liquid Phase Electroepitaxy the Travelling HeaterMethod and Liquid Phase Diffusion.Single Crystal Growth of Semiconductors from Metallic Solutions will serve as avaluable reference tool for researchers and graduate and senior undergraduatestudents in the field of crystal growth. It covers most of the models developedin recent years. The detailed development of basic and constitutive equationsand the associated interface and boundary conditions given for each techniquewill be very valuable to researchers for the development of their new models. Describes the fundamentals of crystal growth modelling Providing a stateofthe art description of the mathematical and experimentalgrowth processes Allows reader to gain clear insight into the practical and mathematicalaspects of the topic «