The book details many of the key issues associated with the scaling to nanodimensions of silicononinsulator structures. Some papers offer new insightparticularl... » 

The book details many of the key issues associated with the scaling to nanodimensions of silicononinsulator structures. Some papers offer new insightparticularly at the devicecircuit interface as appropriate for SOI which isfast becoming a mainstream technology. One of the key issues concerns mobilitydegradation in SOI films less than about 5nm. The advantages of combiningscaled SOI devices with high permittivity k dielectric indicates thatpotential solutions are indeed available down to the 22nm node even with 5nmSOI films. A further key issue and potential show stopper for SOI CMOS ishighlighted in a number of invited and contributed papers addressing atomisticlevel effects. Results are presented for Monte Carlo and driftdiffusionmodelling together with device compact models and circuit level simulation andthis provided for a broad exposure of the problems from intrinsic physics tothe circuit level. The scaling to nanodimensions takes the technology into therealms of quantum effects and a number of papers addressed this aspect fromboth the technological and physics aspects. The scope of potential applicationsfor quantum dots quantum wires and nanotubes are considered. The use ofsemiconductor materials other than Si on insulator is featured in somesections of the book. The potential of IIIV Ge and other materials tofacilitate continuation down the roadmap is illustrated by a review of thestateoftheart. «