A study of the issues behind the development of a high-bandwidth, silicon-complementary, metal-oxide silicon (CMOS), low-power transceiver system for mobile RF ... » 

A study of the issues behind the development of a high-bandwidth, silicon-complementary, metal-oxide silicon (CMOS), low-power transceiver system for mobile RF wireless data communications. The material presented is the result of research carried out at the University of California, Berkeley. «