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Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy
The book considers the main growthrelated phenomena occurring during epitaxialgrowth such as thermal etching doping segregation of the main elements andimpurities coexistence of several phases at the crystal surface andsegregationenhanced diffusion.BRIt is complete with tables graphs andfigures which allow fast determination of suitable growth parameters forpractical applications. TOCIntroduction. Basics of MBE growth. Doping andimpurity segregation effects in MBE. Influence of strain in the epitaxial filmon surface phase equilibria. Conclusion «
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