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Almost all semiconductor devices contain metalsemiconductor insulatorsemiconductor insulatormetal andor semiconductorsemiconductor interfacesand their electronic properties determine the device characteristics. This isthe first monograph that treats the electronic properties of all differenttypes of semiconductor interfaces. Using the continuum of interfaceinduced gapstates IFIGS as a unifying theme Mnch explains the bandstructure lineup atall types of semiconductor interfaces. These intrinsic IFIGS are the wavefunction tails of electron states which overlap a semiconductor bandgapexactly at the interface so they originate from the quantummechanical tunneleffect. He shows that a more chemical view relates the IFIGS to the partialionic character of the covalent interfacebonds and that the charge transferacross the interface may be modeled by generalizing Paulings electronegativityconcept. The IFIGSandelectronegativity theory is used to quantitativelyexplain the barrier heights and band offsets of wellcharacterized Schottkycontacts and semiconductor heterostructures respectively. TOCIntroduction.Depletion Layer. Determination of Barrier Heights and Offsets. LaterallyInhomogeneous Schottky Contacts. The IFIGSandElectronegativity Theory. TheMIGSandElectronegativity Concept Experiment and Theory. FirstPrinciplesCalculations of Barrier Heights and ValenceBand Offsets. Temperature andPressure Effects. Barrier Heights and Extrinsic Interface Defects. ExtrinsicInterface Dipoles. Ohmic Contacts. «
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